Microwave Annealing of Ion Implanted 6H-SiC

Solid-state microwave annealing of ion-implanted 4H–SiC

Solid-state microwave annealing was performed at temperatures up to 2120 C for 30 s on ion-implanted 4H–SiC in N2 ambient. The surface roughness in the samples annealed without a surface cap at 1950 C is 2.65 nm for 10 lm · 10 lm atomic force microscopy scans. The sheet resistances measured on Aland P-implanted 4H–SiC, annealed by microwaves, are lower than the best conventional furnace anneali...

Dynamic annealing in ion implanted SiC: Flux versus temperature dependence

Ultrahigh-temperature microwave annealing of Al+- and P+-implanted 4H-SiC

In this work, an ultrafast solid-state microwave annealing has been performed, in the temperature range of 1700–2120 °C on Al+and P+-implanted 4H-SiC. The solid-state microwave system used in this study is capable of raising the SiC sample temperatures to extremely high values, at heating rates of 600 °C/s. The samples were annealed for 5–60 s in a pure nitrogen ambient. Atomic force microscopy...

Structures of 6H-SiC Surfaces

We have systematically studied reconstructions of the 6H SiC(0001) and (0007) surface under both Si rich and C rich condition using field ion-scanning tunneling microscopy (FI-STM). The sample was cleaned by in situ Si beam etching at 900-1000 'C. The Si rich and C rich phases were produced by annealing the sample in a Si flm and C2HZ, respectively. On the (0001) surface, the as-cleaned surface...

Evolution of Helium Bubbles and Discs in Irradiated 6H-SiC during Post-Implantation Annealing

The single crystal 6H-SiC with [0001] crystal direction irradiated by 400 keV He⁺ ions with 1 × 1017 ions/cm² fluence at 400 °C were annealed at 600, 900, 1200 and 1400 °C for different durations. The evolution of helium bubbles and discs was investigated by transmission electron microscopy. An irradiated layer distributed with fine helium bubbles was formed with a width of ~170 nm after helium...